Patents
USA Patent
United States Patent No. 12,222,315
“Method of initializing and programing 3D non-volatile memory device,” 2025.02.11.
Korea Patent
한국 특허 등록 10-2021-0067172,
“전하 저장 엔지니어링 효과를 이용한 가스 센서의 구동 방법,” 2023.11.16.
(Korean Patent Registration 10-2021-0067172, “Operating Method for a Gas Sensor Using Charge Storage Engineering Effect,” 2023.11.16.)
