2025

64. Y. Han, J. Song, R.-H. Koo, H. Yoo, W. Shin, “Observation of 1/f 4 noise in organic bilayer ambipolar FETs and proposition of defect engineering method for ultimate noise control”, Advanced Electronic Materials, Accepted

63. M.C. Nguyen, K. K. Min, W. Shin, J. Yim, R. Choi, D. Kwon, “Defect Passivation of Hafnium Oxide Ferroelectric Tunnel Junction Using Forming Gas Annealing for Neuromorphic Applications”, Nano Convergence, Vol. 12, March 2025.

62. E. C. Park, J. Kim, J. Ko, W. Shin, M.C. Nguyen, M. Song, K.R. Kwon, R.H. Koo, D. Kwon, “Hafnia-based Ferroelectric Computer Vision System with Artificial Synaptic Array”, Nano Energy, Vol. 131, June 2025.

61. R. H. Koo, W. Shin, S.Kim, J. Kim, B. Kwak, J. Im, H. Kim, D. H. Kwon, S. S. Cheema, J.-H. Lee, D. Kwon, “Low-Frequency Noise Spectroscopy for Navigating Geometrically Varying Strain Effects in HfO2 Ferroelectric FETs”, Advances Science, April 2025.

60.     J. Song, Y. Han, R. H. Koo, J. Seo, H. Yoo, W. Shin, “Toward Understanding Temperature and Bias Instabilities of Anti-ambipolar Transistors via Low-Frequency Noise Spectroscopy,” Small, December 2024.

59.     S. W. Kim, W. Shin, R. H. Koo, J. Kim, J. Im, D. Koh, J. H. Lee, S. S. Cheema, D. Kwon, “A new back-end-of-line ferroelectric field-effect transistor platform via laser processing,” Small, November 2024.

58.     J. Seo, S. Kang, D. Kumar, W. Shin, J. Cho, T. Kim, Y. Kim, B. C. Jang, A. R. Trivedi, H. Yoo, “Random Number Generators and Spiking Neurons from Metal Oxide/Small Molecules Heterojunction N-shape Switching Transistors,” Advanced Functional Materials, Vol. 35, No. 8, February 2025.

57.     R. H. Koo, W. Shin, S. T. Lee, D. Kwon, J. H. Lee, “Stochastic behavior of random telegraph noise in ferroelectric devices: Impact of downscaling and mitigation strategies for neuromorphic applications,” Chaos, Solitons, & Fractals, Vol. 191, February 2025.

56.     W. Shin, C. H. Han, J. Kim, R. H. Koo, K. K. Min, D. Kwon, “Effects of Charge Imbalance on Field‐Induced Instability of HfO2‐Based Ferroelectric Tunnel Junctions,” Advanced Electronic Materials, Vol. 11, No. 2, February 2025.

55. J. Im, S. Pak, S.Y. Woo, W. Shin, S.-T. Lee, “Flash Memory for Synaptic Plasticity in Neuromorphic Computing: A Review“, Biomimetics, Vol. 10, No. 2, February 2025

54.     W. Shin, S. Lee, R. H. Koo, J. Kim, S. Y. Lee, S. T. Lee, “Does a large response suffice?: Thermally stable and low noise Si-doped IZO thin-film transistor-type gas sensors,” Sensors and Actuators B: Chemical, Vol. 422, January 2025.

2024

53.     R. H. Koo, W. Shin, J. Kim, J. Yim, J. Ko, G. Jung, J. Im, S. H. Park, J. J. Kim, S. S. Cheema, D. Kwon, J. H. Lee, “Polarization Pruning: Reliability Enhancement of Hafnia-based Ferroelectric Devices for Memory and Neuromorphic Computing,” Advanced Science, Vol. 11, No. 43, November, 2024.

52.     J. Kim, E. C. Park, W. Shin, R. H. Koo, J. Im, C. H. Han, J. H. Lee, D. Kwon, “All‐Ferroelectric Spiking Neural Networks via Morphotropic Phase Boundary Neurons,” Advanced Science, Vol. 11, No. 44, November 2024.

51.     W. Shin, D. H. Lee, R. Ko, R. H. Koo, H. Yoo. S. T. Lee, “Low-Frequency Noise of MoTe2 Transistor: Effects on Ambipolar Carrier Transport and CYTOP Doping,” Nanoscale Research Letter, Vol. 19, November 2024.

50.  W. Shin, J. Y. Lee, J. Kim, S. Y. Lee, S. T. Lee, “Low-Frequency Noise Analysis on Asymmetric Damage and Self-Recovery Behaviors of ZnSnO Thin-Film Transistors under Hot Carrier Stress,” Nanoscale Research Letters, Vol. 19, November 2024.

49.  B. Kwak, J. Kim, K. Lee, W. Shin, D. Kwon, “Low-frequency noise characteristics of recessed channel ferroelectric field-effect transistors”, IEEE Electron Device Letters, Vol. 45, No. 11, November 2024.

48.  R. H. Koo, W. Shin, G. Jung, J. Kim, S. T. Lee, J. Im, S. H. Park, J. H. Ko, D. Kwon, J. H. Lee, “Strain-Stress Impact on Ferroelectric Devices: A Multi-layer Analysis and Optimization Strategy for Neural Networks,” ACS Materials Letters, Vol. 6, No. 11, October 18, 2024.

47.  J. Kim, E. C. Park, W. Shin, R. H. Koo, C. H. Han, H. Y. Kang, T. G. Yang, S. S. Cheema, J. K. Jeong, and D. Kwon, “Analog Reservoir Computing via Double-Gate Morphotropic Phase Boundary Transistors,” Nature Communications, Vol. 15, October 23, 2024.

46.  W. Shin, Ryun-Han Koo, Sangwoo Kim, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon, Jong-Ho Lee, “Robust 1/f noise unaffected by program/erase cycling-induced damage in ferroelectric Schottky barrier FETs,” IEEE Electron Device Letters, Vol. 45, No. 9, September 2024.

45.  W. Shin, J. Byeon, R. H. Koo, J. Lim, J. H. Kang, A. R. Jang, J. H. Lee, J. J. Kim, S. Cha, S. Park, S. T. Lee, “Towards Ideal Low-Frequency Noise in Monolayer CVD MoS2 FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management,” Advanced Science, Vol. 11, No. 28, July 2024.

44.  Y. Han, S. Lee, M. Kim, W. Shin, H. K. Lee, R. H. Koo, S. T. Lee, C. H. Kim, and H. Yoo, “Charge Transport Advancement in Anti-Ambipolar Transistors: Spatially Separating Layer Sandwiched between N-type Metal Oxides and P-type Small Molecules,” Advanced Functional Materials, Vol. 34, No. 26, June 2024.

43.  R. H. Koo, W. Shin, S. Ryu, S. Kim, G. Jung, S. T. Lee, J. J. Kim, D. Kwon, J. H. Lee, “Examination of Ferroelectric Domain Dynamics in HZO under Endurance Cycling Stress,” IEEE Electron Device Letters, Vol. 45, No. 6, June 2024.

42.  R. H. Koo, W. Shin, G. Jung, D. Kwon, J. J. Kim, D. Kwon, J. H. Lee, “Stochasticity in Ferroelectric Memory Devices with Different Bottom Electrode Crystallinity,” Chaos Solitons & Fractals, Vol. 182, June 2024.

41.  W. Shin, J. Bae, J. H. Park, J. H. Lee, C. H. Kim, S. T. Lee, “Significant Reduction of 1/f Noise in Organic Thin Film Transistors with Self-Assembled Monolayer: Considerations of Density-of-States,” IEEE Electron Device Letters, Vol. 45, No. 4, April 2024.

40.  W. Shin, R. H. Koo, S. Hong, Y. Jeong, G. Jung, S. T. Lee, J. H. Lee, “Proposition of optimal self-curing method in horizontal-floating gate FET-type gas sensors for reliability improvement,” Sensors and Actuators B: Chemical, Vol. 405, April 2024.

39.  R. H. Koo, W. Shin, S. Kim, J. Im, S. H. Park, J. H. Ko, D. Kwon, J. J. Kim, D. Kwon, J. H. Lee, “Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric-based Neuromorphic System,” Advanced Science, Vol. 11, No. 5, February 2024.

38.  W. Shin, J. Y. Lee, R. H. Koo, J. Kim, J. H. Lee, S. Y. Lee, S. T. Lee, “Unveiled Influence of Subgap Density of States on Low-Frequency Noise in Si-doped ZnSnO TFTs: Does Correlated Mobility Fluctuation Model Suffice?”, Advanced Electronic Materials, Vol. 10, No. 2, February 2024.

2023

37.  S. W. Kim, W. Shin, M. Kim, K. R. Kwon, J. Yim, J. Kim, C. Han, S. Jeong, E. C. Park, J. W. You, H. Kim, R. Choi, D. Kwon, “Ferroelectric Field-Effect Transistor Synaptic Device with Hafnium-silicate Interlayer,” IEEE Electron Device Letters, Vol. 44, No. 12, December 2023.

36.  W. Shin, R. H. Koo, S. Hong, G. Jung, Y. Jeong, S. T. Lee, J. H. Lee, “Effects of Sensor platform scaling on Signal-to-Noise Ratio in the resistor- and Horizontal Floating-gate FET-type gas sensors,” IEEE Transactions on Electron Devices, Vol. 70, No. 11, November 2023.

35.  W. Shin, R. H. Koo, S. Kim, D. kwon, J. J. Kim, D. Kwon, J. H. Lee, “Unraveling Threshold Voltage Instability in Ferroelectric Junctionless FETs using Low-Frequency Noise Measurement with Base Bias,” IEEE Electron Device Letters, Vol. 44, No. 10, October 2023.

34.  W. Shin, R. H. Koo, S. Hong, Y. Jeong, G. Jung, S. T. Lee, J. H. Lee, “Annealing Ambient and Film Thickness Dependent NO2 Response and 1/f Noise Characteristics of IGZO Resistor-type Gas Sensors,” IEEE Transactions on Electron Devices, Vol. 70, No. 10, October 2023.

33.  R. H. Koo, W. Shin, S. Ryu, K. Lee, S. H. Park, J. Im, J. H. Ko, J. H. Kim, D. Kwon, J. J. Kim, D. Kwon, J. H. Lee, “Comparative Analysis of n- and p-type Ferroelectric Tunnel Junctions Through Understanding of non-FE Resistance Switching,” IEEE Electron Device Letters, Vol. 44, No. 10, October 2023.

32.  W. Shin, J. Shin, J. H. Lee, H. Yoo, S. T. Lee, “Observation of interface trap reduction in fluoropolymer dielectric organic transistors by low-frequency noise spectroscopy,” Applied Physics Letters, Vol. 122, No. 26, June 2023.

31.  W. Shin, K. K. Min, J. H. Bae, R. H. Koo, D. Kwon, J. J. Kim, D. Kwon, J. H. Lee, “1/f Noise in Synaptic Ferroelectric Tunnel Junction: Impact on Convolutional Neural Network,” Advanced Intelligent Systems, Vol. 5, No. 6, June 2023.

30.  R. H. Koo, W. Shin, K. K. Min, D. Kwon, J. J. Kim, D. Kwon, J. H. Lee, “Optimizing Post-Metal Annealing Temperature Considering Different Resistive Switching Mechanisms in Ferroelectric Tunnel Junction,” IEEE Electron Device Letters, Vol. 44, No. 6, June 2023.

29.  W. Shin, S. Kim, R. H. Koo, D. Kwon, J. J. Kim, D. Kwon, J. H. Lee, “Channel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film Transistors,” IEEE Electron Device Letters, Vol. 44, No. 6, June, 2023.

28.  W. Shin, J. Im, R. H. Koo, J. Kim, K. R. Kwon, D. Kwon, J. J. Kim, J. H. Lee, D. Kwon, “Self‐Curable Synaptic Ferroelectric FET Arrays for Neuromorphic Convolutional Neural Network,” Advanced Science, Vol. 10, No. 15, May 2023.

27.  J. Kim, W. Shin, S. Hong, Y. Jeong, G. Jung, W. Y. Choi, J. J. Kim, B. G. Park, J. H. Lee, “A novel pathway to construct gas concentration prediction model in real-world applications: Data augmentation; fast prediction; and interpolation and extrapolation,” Sensors and Actuators B: Chemical, Vol. 382, May 2023.

26.  W. Shin, S. Hong, Y. Jeong, G. Jung, J. Park, D. Kim, K. Choi, H. Shin, R. H. Koo, J. J. Kim, J. H. Lee, “Low-frequency noise in gas sensors: A review,” Sensors and Actuators B: Chemical, Vol. 15, May 2023.

25.  W. Shin, E. C. Park, R. H. Koo, D. Kwon, D. Kwon, J. H. Lee, “Low-frequency noise characteristics of indium–gallium–zinc oxide ferroelectric thin-film transistors with metal–ferroelectric–metal–insulator–semiconductor structure,” Applied Physics Letters, Vol. 122, No. 5, April 2023.

24.  W. Shin, R. H. Koo, K. K. Min, B. Kwak, D. Kwon, D. Kwon, J. H. Lee, “Effects of temperature and DC cycling stress on resistive switching mechanisms in hafnia-based ferroelectric tunnel junction,” Applied Physics Letters, Vol. 122, No. 5, April 2023.

23.  W. Shin, J. Kim, G. Jung, S. Ju, S. H. Park, Y. Jeong, S. Hong, R. H. Koo, Y. Y. J. J. Kim, S. Han, J. H. Lee, “In-Memory-Computed Low-Frequency Noise Spectroscopy for Selective Gas Detection Using a Reducible Metal Oxide,” Advanced Science, Vol. 10, No. 7, March 2023.

22.  W. Shin, Y. Jeong, M. Kim, J. lee. R. H. Koo, S. Hong, G. Jung, J. J. Kim, J. H. Lee, “Recovery of off- state stress induced damage in FET type gas sensor using self curing method,” Nano Scale Research Letter, Vol. 18, No. 1, February, 2023.

21.  W. Shin, R. H. Koo, K. K. Min, D. Kwon, J. J. Kim, D. Kwon, J. H. Lee, “Unveiling Resistance Switching Mechanisms in Undoped HfOx Ferroelectric Tunnel Junction Using Low-Frequency Noise Spectroscopy,” IEEE Electron Device Letters, Vol. 44, No. 2, February 2023.

20.  R. H. Koo, W. Shin, K. K. Min, D. Kwon, D. H. Kim, J. J. Kim, D. Kwon, J. H. Lee, “Effect of Carrier Transport Process on Tunneling Electroresistance in Ferroelectric Tunnel Junction,” IEEE Electron Device Letters, Vol. 44, No. 2, January 2023.

2022

19.  W. Shin, J. Yim, J. H. Bae, J. K. Lee, J. Kim, C. Han, J. Kim, S. Hong, Y. Jeong, D. Kwon, B. G. Park, D. Kwon, J. H. Lee, “Synergistic Improvement of Sensing Performance in Ferroelectric-Based Transistor-Type Gas Sensors Using Remnant Polarization,” Materials Horizons, Vol. 9, No. 6, September 2022.

18.  W. Shin, Y. Jeong, S. Hong, G. Jung, J. Park, D. Kim, B. G. Park, J. H. Lee, “Fully Integrated FET-type Gas Sensor with optimized Signal-to-Noise Ratio for H2S gas detection,” Sensors and Actuators B: Chemical, Vol. 367, September 2022.

17.  W. Shin, R. Koo, S. Hong, D. Kwon, J. Hwang, B. G. Park, J. H. Lee, “Highly Efficient Self-Curing Method in MOSFET Using Parasitic Bipolar Junction Transistor,” IEEE Electron Devices Letters, Vol. 43, No. 7, July 2022.

16.  W. Shin, J. H. Bae, J. Kim, R. H. Koo, D. Kwon, J. H. Lee, “Variability analysis of ferroelectric FETs in program operation using low-frequency noise spectroscopy,” Applied Physics Letters, Vol. 121, No. 6, July 2022.

15  W. Shin, J. H. Bae, D. Kwon, B. G. Park, D. Kwon, J. H. Lee, “Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: from Conduction Mechanism and Scaling Perspectives,” IEEE Electron. Devices Letters, Vol. 43, No. 6, June 2022.

14.  W. Shin, S. Hong, Y. Jeong, G. Jung, B. G. Park, J. H. Lee, “Effects of Postdeposition Annealing Ambience on NO2 Gas Sensing Performance in Si-based FET-type Gas Sensor,” IEEE Transactions on Electron Devices, Vol. 69, No. 5, May 2022.

13.  W. Shin, G. Jung, S. Hong, Y. Jeong, J. Park, D. Kim, J. H. Lee, “Optimization of Channel Structure and Bias Condition for Signal-to-Noise Ratio Improvement in Si-based FET-type Gas sensor with Horizontal Floating-Gate,” Sensors and Actuators B: Chemical, Vol. 357, April 2022.

12.  W. Shin, S. Hong, G. Jung, Y. Jeong, J. Park, D. Kim, C. Lee, J. H. Bae, B. G. Park, J. H. Lee, “Effects of Channel Length Scaling on the Signal-to-Noise Ratio in FET-type Gas Sensor with Horizontal Floating-Gate,” IEEE Electron Devices Letters, Vol. 43, No. 3, March 2022.

11.  W. Shin, K. K. Min, J. H. Bae, J. Yim, D. Kwon, Y. Kim, J. H. Lee, “Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy,” Nanoscale, Vol. 14, No. 6, February 2022.

10.  W. Shin, J. H. Bae, S. Kim, K. Lee, D. Kwon, B. G. Park, J. H. Lee, “Effects of High-Pressure Annealing on the Low-Frequency Noise Characteristics in Ferroelectric FET,” IEEE Electron Device Letters, Vol. 43, No. 1, January 2022.

2021

9.  W. Shin, D. Kwon, M. Ryu, J. Kwon, S. Hong, Y. Jeong, G. Jung, J. Park, D. Kim, J. H. Lee, “Effects of IGZO film thickness on H2S gas sensing performance: response, excessive recovery, low-frequency noise, and signal-to-noise-ratio,” Sensors and Actuators B: Chemical, Vol. 344, October 2021.

8.  W. Shin, S. Hong, Y. Jeong, G. Jung, J. Park, D. Kim, B. G. Park, J. H. Lee, “Optimization of post-deposition annealing temperature for improved signal-to-noise-ratio in In2O3 gas sensor,” Semiconductor Science and Technology, Vol. 36, No. 7, June 2021.

7.  W. Shin, D. Kwon, J. Bae, S. Lim, B. G. Park, J. H. Lee, “Impacts of Program/Erase Cycling on the Low-Frequency Noise Characteristics of Reconfigurable Gated Schottky Diodes,” IEEE Electron Device Letters, Vol. 42, No. 6, June 2021.

6.  W. Shin, S. Hong, Y. Jeong, G. Jung, J. Park, D. Kim, C. Lee, B. G. Park, J. H. Lee, “Effect of Charge Storage Engineering on NO2 Gas Sensing Properties in WO3 FET-type Gas Sensor with Horizontal Floating-Gate,” Nanoscale, Vol. 13, No. 19, May, 2021.

5.  G. Jung, W. Shin, S. Hong, Y. Jeong, J. Park, D. Kim, J. H. Lee, “Comparison of the characteristics of semiconductor gas sensors with different transducers fabricated on the same substrate,” Sensors and Actuators B: Chemical, Vol. 335, May 2021.

4.  W. Shin, S. Hong, G. Jung, Y. Jeong, J. Park, D. Kim, D. Jang, B. G. Park, J. H. Lee, "Improved Signal-to-Noise-Ratio of FET-type Gas Sensors Using Body Bias Control and Embedded Micro-Heater," Sensors and Actuators B: Chemical, Vol. 329, February 2021.

3. D. Kwon, W. Shin, J.H. Bae, S. Lim, B. G. Park, J. H. Lee, “Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes”, IEEE, Vol. 42, No. 3, January 2021.

2020

2.  W. Shin, G. Jung, S. Hong, Y. Jeong, J. Park, D. Jang, D. Kim, D. Kwon, J. Bae, B. G. Park, J. H. Lee, "Proposition of Deposition and Bias Conditions for Optimal Signal-to-Noise-Ratio in Resistor- and FET-type Gas Sensors," Nanoscale, Vol. 12, No. 38, September 2020.

1.  W. Shin, G. Jung, S. Hong, Y. Jeong, J. Park, D. Jang, B.- G. Park, J. H. Lee, "Low frequency noise characteristics of resistor- and Si MOSFET-type gas sensors fabricated on the same wafer with In2O3 sensing layer," Sensors and Actuators B: Chemical, Vol. 318, September 2020.